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    NXP Semiconductors BYC8-600 Hyperfast power diode BYC8-600 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2013. All rights reserved Product data sheet 23 May 2013 4 / 9 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IF = 8 A; T j = 25 °C - 2 2.9 V IF = 8 A; T j = 150 °C; Fig. 4 - 1.4 1.85 V VF forward voltage IF = 16 A; T j = 150 °C - 1.7 2.3 V VR = 600 V; T j = 25 °C - 9 150 μA IR reverse current VR = 500 V; T j = 100 °C - 1.1 3 mA Dynamic characteristics Qr recovered charge IF = 1 A; V R = 100 V; dI F/dt = 100 A/μs; Tj = 25 °C - 12 - nC IF = 1 A; V R = 30 V; dI F/dt = 50 A/μs; Tj = 25 °C - 30 52 ns IF = 8 A; V R = 400 V; dI F/dt = 500 A/μs; Tj = 25 °C; Fig. 5 - 19 - ns trr reverse recovery time IF = 8 A; V R = 400 V; dI F/dt = 500 A/μs; Tj = 100 °C - 32 40 ns IF = 8 A; V R = 400 V; dI F/dt = 50 A/μs; Tj = 125 °C - 1.5 5.5 A IRM peak reverse recovery current IF = 8 A; V R = 400 V; dI F/dt = 500 A/μs; Tj = 100 °C - 9.5 12 A VFR forward recovery voltage IF = 10 A; dI F/dt = 100 A/μs; T j = 25 °C; Fig. 6 - 8 10 V |